![]() In summary, quantum mechanical effects are a hindrance to ever smaller conventional MOS transistors. The objectionable MOS leakage currents are due to quantum mechanical effects–electron tunneling through gate oxide, and the narrow channel. ![]() Improved photolithography will have to be applied to other than the conventional transistors, dimensions (under 20- to 30-nm). However, conventional MOS transistors are not expected to be usable at these smaller geometries below 20- to 30-nm. Photolithography, or other lithographic techniques, will continue to improve, providing ever smaller geometry. Though some think that 1- to 2-nm is the limit. The end of shrinkage in MOS transistors is expected at 20- to 30-nm. At 45-nm, heroic innovations were required to minimize this leakage. At 65-nm leakage currents were becoming evident. As of this writing (2006), the MOS transistor gate length is 65-nm for leading-edge production, with 45-nm anticipated within a year. ![]() Every couple of years since the late 1960’s a geometry shrink has taken place, increasing the circuit density– more circuitry at a lower cost in the same space. Most integrated circuits are digital, based on MOS (CMOS) transistors.
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